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“SILICON -2010”, 6-9 July, Nizhny Novgorod, Russia
The VII International Conference and the VI School for Young Scientists “SILICON-2010” will be held from July 6 through July 9, 2010 in Nizhny Novgorod, Russia. The conference will focus on the challenging problems of physics, materials science, technology and diagnostics of silicon and silicon-based nanostructures and devices. Such forums have been a regular event in major industrial and scientific centers of Russia since 1999. The summer 2010 will see it hosted by Nizhny Novgorod, an ancient city with the population of 1,5 million and a picturesque location at the confluence of two big Russian rivers, the Oka and the Volga, 400 km off Moscow. Our city is easily accessed from Moscow by both railway and air. The Lufthansa Airlines have direct flights to Nizhny Novgorod from Frankfurt-Main.
The working languages of the Conference are Russian and English.
Institute for Physics of Microstructures RAS
Nizhny Novgorod State University
Institute of Chemistry of High-Purity Substances RAS
State Technological University "Moscow Institute of Steel and Alloys" (MISIS)
Institute of Microelectronics Technology and High Purity Materials RAS
Scientific Council for Physics and Chemistry of Semiconductor Material Technology RAS
Scientific Council for Semiconductor Physics RAS
Science and Education Support Fund of Nizhny Novgorod
●Growth and material science of bulk single crystals of silicon and related materials (Ge, SiGe);
●Manufacturing of silicon and Si-based structures for photovoltaics;
●Growth and material science of thin (including epitaxial) films on silicon, silicon-on-insulator, strained structures and low/high-k dielectrics;
●Physics of silicon low-dimensional structures for solid-state electronics including nano- and optoelectronics, spintronics and photonics;
●Nanotechnologies of silicon electronics: ion implantation, lithography, the quantum dots and
buried layers manufacturing technologies;
●Diagnostics of silicon and silicon-based devises;
●Novel devices comprising elements of micromechanics, optoelectronics, power electronics, light-emitting structures and photo detectors.
Z.F. Krasilnik |
IPM RAS, Nizhny Novgorod |
Chair |
M.Ya. Dashevsky |
MISIS, Moscow |
Vice-chairman |
D.A. Pavlov |
NNSU, Nizhny Novgorod |
Vice-chairman |
A.Novikov |
IPM RAS, Nizhny Novgorod |
Conference Secretary |
20 January 2010 |
Registration on conference website |
10 February 2010 |
Second Announcement |
10 March 2010 |
Abstract Submission Deadline |
12 April 2010 |
Abstract Acceptance Notification |
Abstract submission is open from February 1, 2010 till March 10, 2010. Organizing committee couldn't guarantee the consideration of late submitted abstracts. All authors will be notified about the acceptance of their papers in the beginning of April. Abstracts are limited to 1 page and should be organized according an attached template. Abstract submission is available via the Conference website. Please draw attention that it is necessary to register on the Conference website before submitting an abstract. The book of abstracts will have been published by the opening of a Conference.
Participants should pay a 50 EUR registration fee. It includes participation, book of abstracts, coffee breaks, excursions. This fee could be paid by cash during on desk registration.
The VII International Conference and the VI School for Young Scientists "SILICON-2010" will be held in Nizhny Novgorod at the Nizhny Novgorod State University campus. The hotel "Oka" is recommended for accommodation of the foreign participants. The hotel prices are approximately 50 - 100 EUR depending on a room category. All additional information about accommodation conditions, prices and hotel booking can be found on the hotel website http://www.hoteloka.ru/. Hotel is situated 500 meters away from the campus.
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